300mw silicon planar zener diodes 1 of 3 www.senocn.com z ibo seno electronic engineering co., ltd. features ? total power dissipation : max. 300 mw ? small plastic package suitable for surface mounted design ? tolerance approximately 5% absolute maximum ratings (t a = 25 o c) parameter symbol value unit power dissipation p tot 300 mw junction temperature t j 150 o c storage temperature range t s - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol max. unit thermal resistance junction to ambient air r tha 0.3 k/w forward voltage at i f = 10 ma v f 0.9 v anode 2 top vi e w simplified outline sod-323 and symbol 1 2 pi nni n g 1 pi n cathode description mm3z2v0~mm3z75 mm3z2v0~mm3z75 a l l d a t a s h e e t
2 of 3 www.senocn.com z ibo seno electronic engineering co., ltd. characteristics at t a = 25 o c zener voltage range 1) dynamic impedance 2) reverse leakage current l zt for v zt z zt (max.) at i zt i r (max.) at v r type marking code v znom v ma v ? ma a v mm3z2v0 b0 2.0 5 1.8...2.15 100 5 120 0.5 mm3z2v2 c0 2.2 5 2.08...2.33 100 5 120 0.7 mm3z2v4 1c 2.4 5 2.28...2.56 100 5 120 1 mm3z2v7 1d 2.7 5 2.5...2.9 110 5 120 1 mm3z3v0 1e 3.0 5 2.8...3.2 120 5 50 1 mm3z3v3 1f 3.3 5 3.1...3.5 130 5 20 1 mm3z3v6 1h 3.6 5 3.4...3.8 130 5 10 1 mm3z3v9 1j 3.9 5 3.7...4.1 130 5 5 1 mm3z4v3 1k 4.3 5 4...4.6 130 5 5 1 mm3z4v7 1m 4.7 5 4.4...5 130 5 2 1 mm3z5v1 1n 5.1 5 4.8...5.4 130 5 2 1.5 mm3z5v6 1p 5.6 5 5.2...6 80 5 1 2.5 mm3z6v2 1r 6.2 5 5.8...6.6 50 5 1 3 mm3z6v8 1x 6.8 5 6.4...7.2 30 5 0.5 3.5 mm3z7v5 1y 7.5 5 7...7.9 30 5 0.5 4 mm3z8v2 1z 8.2 5 7.7...8.7 30 5 0.5 5 mm3z9v1 2a 9.1 5 8.5...9.6 30 5 0.5 6 mm3z10 2b 10 5 9.4...10.6 30 5 0.1 7 mm3z11 2c 11 5 10.4...11.6 30 5 0.1 8 mm3z12 2d 12 5 11.4...12.7 35 5 0.1 9 mm3z13 2e 13 5 12.4...14.1 35 5 0.1 10 mm3z15 2f 15 5 13.8...15.6 40 5 0.1 11 mm3z16 2h 16 5 15.3...17.1 40 5 0.1 12 mm3z18 2j 18 5 16.8...19.1 45 5 0.1 13 mm3z20 2k 20 5 18.8...21.2 50 5 0.1 15 mm3z22 2m 22 5 20.8...23.3 55 5 0.1 17 mm3z24 2n 24 5 22.8...25.6 60 5 0.1 19 mm3z27 2p 27 5 25.1...28.9 70 2 0.1 21 mm3z30 2r 30 5 28...32 80 2 0.1 23 mm3z33 2x 33 5 31...35 80 2 0.1 25 MM3Z36 2y 36 5 34...38 90 2 0.1 27 mm3z39 2z 39 2.5 37...41 100 2 2 30 mm3z43 3a 43 2.5 40...46 130 2 2 33 mm3z47 3b 47 2.5 44...50 150 2 2 36 mm3z51 3c 51 2.5 48...54 180 2 1 39 mm3z56 3d 56 2.5 52...60 180 2 1 43 mm3z62 3e 62 2.5 58...66 200 2 0.2 47 mm3z68 3f 68 2.5 64...72 250 2 0.2 52 mm3z75 3h 75 2.5 70...79 300 2 0.2 57 1) v z is tested with pulses (20 ms). 2) z zt is measured at i z by given a very small a.c. current signal. mm3z2v0~mm3z75 mm3z2v0~mm3z75 a l l d a t a s h e e t
3 of 3 www.senocn.com z ibo seno electronic engineering co., ltd. iz 0 0 10 20 vz 30 40 v 8 ma test cu rrent iz 5ma 10 20 30 0 break dow n characteristics t j = co ns t ant (pulsed) 01 23 test current iz 5ma 10 20 45 7 6 vz tj= 2 5 c o 10 9 v iz 30 40 br eakdown characteristics t j = co nstant (pulsed) tj=25 c 50 ma o 2v7 3v 3 3v9 4v7 5v6 6v8 8v2 10 12 15 18 22 27 33 ambi en t temperature: ta ( c) o 0 25 100 150 0 100 200 30 0 power d issipation: ptot (mw) dera ting c urve mm3z2v0~mm3z75 mm3z2v0~mm3z75 a l l d a t a s h e e t
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